Invention Grant
US08507160B2 Flare prediction method, photomask manufacturing method, semiconductor device manufacturing method, and computer-readable medium
有权
闪光预测方法，光掩模制造方法，半导体器件制造方法和计算机可读介质
- Patent Title: Flare prediction method, photomask manufacturing method, semiconductor device manufacturing method, and computer-readable medium
- Patent Title (中): 闪光预测方法，光掩模制造方法，半导体器件制造方法和计算机可读介质
-
Application No.: US13233680Application Date: 2011-09-15
-
Publication No.: US08507160B2Publication Date: 2013-08-13
- Inventor: Taiga Uno , Yukiyasu Arisawa
- Applicant: Taiga Uno , Yukiyasu Arisawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2011-023019 20110204
- Main IPC: G03F9/00
- IPC: G03F9/00
Abstract:
According to one embodiment, a flare prediction method in photolithography includes determining a pattern density distribution of a pattern layout, determining an inclination of a variation in the pattern density distribution, and performing a flare calculation in a plurality of partition sizes based on the inclination of a variation in the pattern density distribution.
Public/Granted literature
Information query
