Invention Grant
- Patent Title: Thin film transistor array panel and method for manufacturing the same
- Patent Title (中): 薄膜晶体管阵列面板及其制造方法
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Application No.: US12699764Application Date: 2010-02-03
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Publication No.: US08507303B2Publication Date: 2013-08-13
- Inventor: Hong-Sick Park
- Applicant: Hong-Sick Park
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2004-0102374 20041207
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer.
Public/Granted literature
- US20100144076A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-06-10
Information query
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