Invention Grant
- Patent Title: Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
- Patent Title (中): 采用选择性生长的可逆电阻切换元件的存储单元及其形成方法
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Application No.: US13464115Application Date: 2012-05-04
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Publication No.: US08507315B2Publication Date: 2013-08-13
- Inventor: April D. Schricker , S. Brad Herner , Mark H. Clark
- Applicant: April D. Schricker , S. Brad Herner , Mark H. Clark
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan PC
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A method of forming a memory cell is provided that includes forming a steering element above a substrate, and forming a reversible resistance-switching element coupled to the steering element. The reversible resistance-switching element includes one or more of TiOx, Ta2O5, Nb2O5, Al2O3, HfO2, and V2O5, and the reversible resistance switching element is formed without being etched. Numerous other aspects are provided.
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