Compound semiconductor device and method of manufacturing the same

Invention Grant

US08507329B2 Compound semiconductor device and method of manufacturing the same 有权

Title translation: 化合物半导体器件及其制造方法

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Patent Title: Compound semiconductor device and method of manufacturing the same
Patent Title (中): 化合物半导体器件及其制造方法
Application No.: US13591401

Application Date: 2012-08-22
Publication No.: US08507329B2

Publication Date: 2013-08-13
Inventor: Toshihide Kikkawa , Kenji Imanishi
Applicant: Toshihide Kikkawa , Kenji Imanishi
Applicant Address: JP Kawasaki
Assignee: Fujitsu Limited
Current Assignee: Fujitsu Limited
Current Assignee Address: JP Kawasaki
Agency: Fujitsu Patent Center
Priority: JP2009-023953 20090204
Main IPC: H01L21/8232
IPC: H01L21/8232

Compound semiconductor device and method of manufacturing the same

Abstract:

A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer.

Abstract(Chinese):

化合物半导体器件设置有衬底，在衬底上形成的AlN层，在AlN层上形成的AlGaN层和比AlN层更大的电子亲和力，在AlGaN层上形成另一AlGaN层，并且电子亲和力小于 AlGaN层。此外，提供了形成在后面的AlGaN层上的i-GaN层，以及在i-GaN层上形成的i-AlGaN层和n-AlGaN层。

Public/Granted literature

US20120315743A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-12-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺