Invention Grant
- Patent Title: Integrated circuit fabrication
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Application No.: US13445797Application Date: 2012-04-12
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Publication No.: US08507341B2Publication Date: 2013-08-13
- Inventor: Luan C. Tran , John Lee , Zengtao “Tony” Liu , Eric Freeman , Russell Nielsen
- Applicant: Luan C. Tran , John Lee , Zengtao “Tony” Liu , Eric Freeman , Russell Nielsen
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/8242
- IPC: H01L21/8242
Abstract:
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width.
Public/Granted literature
- US20120193777A1 INTEGRATED CIRCUIT FABRICATION Public/Granted day:2012-08-02
Information query
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