Invention Grant
- Patent Title: Semiconductor device employing fin-type gate and method for manufacturing the same
- Patent Title (中): 采用鳍型栅极的半导体器件及其制造方法
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Application No.: US12842598Application Date: 2010-07-23
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Publication No.: US08507349B2Publication Date: 2013-08-13
- Inventor: Seung Hyun Lee
- Applicant: Seung Hyun Lee
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc
- Current Assignee: Hynix Semiconductor Inc
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0117118 20091130
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device comprises an active region having an upper portion and a sidewall portion which are protruded from the top surface of a device isolation region, and a silicide film disposed in the upper portion and the sidewall portion of the active region, thereby effectively reducing resistance in a source/drain region of the semiconductor device. As a result, the entire resistance of the semiconductor device comprising a fin-type gate can be reduced to improve characteristics of the semiconductor device.
Public/Granted literature
- US20110127611A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-06-02
Information query
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