Invention Grant
- Patent Title: Composite wafer semiconductor
- Patent Title (中): 复合晶片半导体
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Application No.: US12870444Application Date: 2010-08-27
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Publication No.: US08507358B2Publication Date: 2013-08-13
- Inventor: Bruce C. S. Chou
- Applicant: Bruce C. S. Chou
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/30 ; H01L21/46 ; H01L21/44 ; H01L21/70
Abstract:
A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor.
Public/Granted literature
- US20120049299A1 COMPOSITE WAFER SEMICONDUCTOR Public/Granted day:2012-03-01
Information query
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