Invention Grant
- Patent Title: Method of forming epitaxial semiconductor structure
- Patent Title (中): 形成外延半导体结构的方法
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Application No.: US13487610Application Date: 2012-06-04
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Publication No.: US08507371B2Publication Date: 2013-08-13
- Inventor: Eric Ting-Shan Pan
- Applicant: Eric Ting-Shan Pan
- Applicant Address: US NV Zephyr Cove
- Assignee: Athenaeum LLC
- Current Assignee: Athenaeum LLC
- Current Assignee Address: US NV Zephyr Cove
- Agency: J. Nicholas Gross, Atty
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Public/Granted literature
- US20120238083A1 Method of Forming Epitaxial Semiconductor Structure Public/Granted day:2012-09-20
Information query
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