Invention Grant
- Patent Title: Method for fabricating silicon and/or germanium nanowires
- Patent Title (中): 硅和/或锗纳米线的制造方法
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Application No.: US12767707Application Date: 2010-04-26
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Publication No.: US08507381B2Publication Date: 2013-08-13
- Inventor: Vincent Renard , Vincent Jousseaume , Michael Jublot
- Applicant: Vincent Renard , Vincent Jousseaume , Michael Jublot
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Miles & Stockbridge P.C.
- Priority: FR0952780 20090428
- Main IPC: H01L21/443
- IPC: H01L21/443
Abstract:
The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.
Public/Granted literature
- US20100273316A1 METHOD FOR FABRICATING SILICON AND/OR GERMANIUM NANOWIRES Public/Granted day:2010-10-28
Information query
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