Invention Grant
US08507927B2 Semiconductor device with high density optical chips and manufacturing method thereof
失效
具有高密度光学芯片的半导体器件及其制造方法
- Patent Title: Semiconductor device with high density optical chips and manufacturing method thereof
- Patent Title (中): 具有高密度光学芯片的半导体器件及其制造方法
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Application No.: US12722847Application Date: 2010-03-12
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Publication No.: US08507927B2Publication Date: 2013-08-13
- Inventor: Atsuko Iida , Iwao Mitsuishi
- Applicant: Atsuko Iida , Iwao Mitsuishi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-080880 20090330
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
An aspect of the present invention provides a semiconductor device, in which densely packaging and high performance of optical elements are realized by a simple manufacturing process. The semiconductor device includes: a first chip module, a second chip module and a bonding layer. The first chip module includes a plurality of optical chips that are bonded within a substantially same plane with a first resin layer. The second chip module includes a plurality of control semiconductor chips and a plurality of connecting chips. The connecting chips include conductive materials piercing through the connecting chips. The control semiconductor chips and the connecting chips are bonded within a substantially same plane with a second resin layer. And the optical chips and the control semiconductor chips are electrically connected through the connecting chips.
Public/Granted literature
- US20100244059A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-30
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