Disclosed herein is a light emitting device including a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor, wherein the first nitride semiconductor and the second nitride semiconductor are connected by the connection layer, and the light emitting device further comprises electrodes formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor. The light emitting device may be driven and emit light using AC power.