Invention Grant
US08507945B2 Semiconductor device including an insulated gate bipolar transistor (IGBT)
有权
包括绝缘栅双极晶体管（IGBT）的半导体器件
- Patent Title: Semiconductor device including an insulated gate bipolar transistor (IGBT)
- Patent Title (中): 包括绝缘栅双极晶体管（IGBT）的半导体器件
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Application No.: US12867832Application Date: 2008-03-31
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Publication No.: US08507945B2Publication Date: 2013-08-13
- Inventor: Katsumi Nakamura
- Applicant: Katsumi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/JP2008/056306 WO 20080331
- International Announcement: WO2009/122486 WO 20091008
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
A semiconductor device includes a semiconductor substrate and a MOS transistor. The semiconductor substrate has the first main surface and the second main surface facing each other. The MOS transistor includes a gate electrode (5a) formed on the first main surface side, an emitter electrode (11) formed on the first main surface side, and a collector electrode (12) formed in contact with the second main surface. An element generates an electric field in a channel by a voltage applied to the gate electrode (5a), and controls the current between the emitter electrode (11) and the collector electrode (12) by the electric field in the channel. The spike density in the interface between the semiconductor substrate and the collector electrode (12) is not less than 0 and not more than 3×108 unit/cm2. Consequently, a semiconductor device suitable for parallel operation is provided.
Public/Granted literature
- US20100327313A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-12-30
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