Invention Grant
US08507954B2 Integrated CMOS porous sensor having sensor electrodes formed with the interconnect conductors of a MOS circuit
有权
集成CMOS多孔传感器，其具有由MOS电路的互连导体形成的传感器电极
- Patent Title: Integrated CMOS porous sensor having sensor electrodes formed with the interconnect conductors of a MOS circuit
- Patent Title (中): 集成CMOS多孔传感器，其具有由MOS电路的互连导体形成的传感器电极
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Application No.: US12975846Application Date: 2010-12-22
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Publication No.: US08507954B2Publication Date: 2013-08-13
- Inventor: Timothy Cummins
- Applicant: Timothy Cummins
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Egan, Peterman & Enders LLP.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A single chip wireless sensor comprises a microcontroller connected by a transmit/receive interface to a wireless antenna. The microcontroller is also connected to an 8 kB RAM, a USB interface, an RS232 interface, 64 kB flash memory, and a 32 kHz crystal. The device senses humidity and temperature, and a humidity sensor is connected by an 18 bit ΣΔ A-to-D converter to the microcontroller and a temperature sensor is connected by a 12 bit SAR A-to-D converter to the microcontroller. The device is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process.
Public/Granted literature
- US20110089439A1 INTEGRATED CMOS POROUS SENSOR Public/Granted day:2011-04-21
Information query
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