Solid-state imaging device

Invention Grant

US08507960B2 Solid-state imaging device 有权

Title translation: 固态成像装置

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Patent Title: Solid-state imaging device
Patent Title (中): 固态成像装置
Application No.: US11604985

Application Date: 2006-11-27
Publication No.: US08507960B2

Publication Date: 2013-08-13
Inventor: Kazuichiro Itonaga
Applicant: Kazuichiro Itonaga
Applicant Address: JP Tokyo
Assignee: Sony Corporation
Current Assignee: Sony Corporation
Current Assignee Address: JP Tokyo
Agency: The Chicago Technology Law Group, LLC
Agent Robert J. Depke
Priority: JPP2005-351368 20051205
Main IPC: H01L31/062
IPC: H01L31/062 ; H01L31/113

Abstract:

A solid-state imaging device that includes a pixel including a photoelectric conversion section, and a conversion section that converts an electric charge generated by photoelectric conversion into a pixel signal. In the solid-state imaging device, substantially only a gate insulation film is formed on a substrate corresponding to an area under a gate electrode of at least one transistor in the pixel.

Abstract(Chinese):

一种固态成像装置，包括包括光电转换部的像素和将由光电转换产生的电荷转换为像素信号的转换部。在固态成像装置中，在与像素中的至少一个晶体管的栅电极下方的区域对应的基板上基本上仅形成栅极绝缘膜。

Public/Granted literature

US20070128954A1 Solid-state imaging device Public/Granted day:2007-06-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的