Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13067154Application Date: 2011-05-12
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Publication No.: US08508033B2Publication Date: 2013-08-13
- Inventor: Satoshi Kageyama , Yuichi Nakao
- Applicant: Satoshi Kageyama , Yuichi Nakao
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-274043 20071022; JP2007-274044 20071022
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48
Abstract:
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.
Public/Granted literature
- US20110215482A1 Semiconductor device Public/Granted day:2011-09-08
Information query
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