Invention Grant
- Patent Title: Enhanced bump pitch scaling
- Patent Title (中): 增强凸点间距缩放
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Application No.: US13162233Application Date: 2011-06-16
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Publication No.: US08508054B2Publication Date: 2013-08-13
- Inventor: Mengzhi Pang , Matthew Kaufmann
- Applicant: Mengzhi Pang , Matthew Kaufmann
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
An integrated circuit (IC) device is provided. In an embodiment the IC device includes an IC die configured to be bonded onto an IC routing member and a first plurality of pads that is located on a surface of the IC die, each pad being configured to be coupled to a respective pad of a second plurality of pads that is located on a surface of the IC routing member. A pad of the first plurality of pads is offset relative to a respective pad of the second plurality of pads such that the pad of the first plurality of pads is substantially aligned with the respective pad of the second plurality of pads after the IC die is bonded to the IC routing member.
Public/Granted literature
- US20120319269A1 Enhanced Bump Pitch Scaling Public/Granted day:2012-12-20
Information query
IPC分类:
