Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12923857Application Date: 2010-10-12
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Publication No.: US08508194B2Publication Date: 2013-08-13
- Inventor: Ho-jung Kim , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
- Applicant: Ho-jung Kim , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0022948 20100315
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.
Public/Granted literature
- US20110221482A1 Semiconductor device Public/Granted day:2011-09-15
Information query
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