Invention Grant
US08508284B2 Semiconductor integrated circuit having fuse circuit and driving method of fuse circuit 失效
具有熔丝电路和熔丝电路驱动方式的半导体集成电路

  • Patent Title: Semiconductor integrated circuit having fuse circuit and driving method of fuse circuit
  • Patent Title (中): 具有熔丝电路和熔丝电路驱动方式的半导体集成电路
  • Application No.: US13337514
    Application Date: 2011-12-27
  • Publication No.: US08508284B2
    Publication Date: 2013-08-13
  • Inventor: Young-Han Jeong
  • Applicant: Young-Han Jeong
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2011-0125384 20111128
  • Main IPC: H01H37/76
  • IPC: H01H37/76
Semiconductor integrated circuit having fuse circuit and driving method of fuse circuit
Abstract:
A semiconductor integrated circuit includes a fuse connected between a first node and a second node, a first driver configured to pull down a voltage of the first node in an initialization period in response to a fuse sensing signal, a second driver configured to pull up a voltage of the second node in an initial period of a fuse sensing period in response to the fuse sensing signal, a sensor configured to determine whether the fuse is blown or not in response to a voltage of the first node, and a third driver configured to drive the second node to a voltage level lower than a pull-up voltage level of the second driver after the initial period of the fuse sensing period in response to an output signal of the sensor and the fuse sensing signal.
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