Invention Grant
US08508284B2 Semiconductor integrated circuit having fuse circuit and driving method of fuse circuit
失效
具有熔丝电路和熔丝电路驱动方式的半导体集成电路
- Patent Title: Semiconductor integrated circuit having fuse circuit and driving method of fuse circuit
- Patent Title (中): 具有熔丝电路和熔丝电路驱动方式的半导体集成电路
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Application No.: US13337514Application Date: 2011-12-27
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Publication No.: US08508284B2Publication Date: 2013-08-13
- Inventor: Young-Han Jeong
- Applicant: Young-Han Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0125384 20111128
- Main IPC: H01H37/76
- IPC: H01H37/76

Abstract:
A semiconductor integrated circuit includes a fuse connected between a first node and a second node, a first driver configured to pull down a voltage of the first node in an initialization period in response to a fuse sensing signal, a second driver configured to pull up a voltage of the second node in an initial period of a fuse sensing period in response to the fuse sensing signal, a sensor configured to determine whether the fuse is blown or not in response to a voltage of the first node, and a third driver configured to drive the second node to a voltage level lower than a pull-up voltage level of the second driver after the initial period of the fuse sensing period in response to an output signal of the sensor and the fuse sensing signal.
Public/Granted literature
- US20130135034A1 SEMICONDUCTOR INTEGRATED CIRCUIT HAVING FUSE CIRCUIT AND DRIVING METHOD OF FUSE CIRCUIT Public/Granted day:2013-05-30
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