Techniques are disclosed relating to charging and discharging gates of transistors. In one embodiment, an apparatus includes first and second drivers. The first driver is configured to discharge a gate of a first transistor, and to send a charge indication to the second driver in response to reaching a Miller plateau for the first transistor. The second driver is configured to charge a gate of a second transistor above a threshold voltage in response to receiving the charge indication. In some embodiments, the second driver is configured to begin charging the gate of the second transistor to a voltage below the threshold voltage when the first driver begins discharging the gate of the first transistor begins, and to wait to charge the gate of the second transistor above the threshold voltage until the charge indication has been received.