Invention Grant
- Patent Title: High-frequency power amplifier
- Patent Title (中): 高频功率放大器
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Application No.: US13398893Application Date: 2012-02-17
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Publication No.: US08508299B2Publication Date: 2013-08-13
- Inventor: Takayuki Kawano , Kenta Seki , Satoshi Sakurai
- Applicant: Takayuki Kawano , Kenta Seki , Satoshi Sakurai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2011-052994 20110310
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
There is a need to provide a high-frequency power amplifier capable of reducing a talk current and reducing a phase deviation in output. The high-frequency power amplifier includes differently sized first through fifth power amplification transistors and impedance matching circuits for example. The high-frequency power amplifier changes a signal path to be used in accordance with a power specification signal. The high-frequency power amplifier uses a signal path from the first transistor to the second transistor in high power mode. The high-frequency power amplifier uses a signal path from the first transistor to the third transistor in medium power mode. The high-frequency power amplifier uses a signal path from the fourth transistor to the fifth transistor in low power mode. The high-frequency power amplifier is configured so that each of the signal paths includes the same number of stages of power amplification transistors and impedance matching circuits.
Public/Granted literature
- US20120229217A1 HIGH-FREQUENCY POWER AMPLIFIER Public/Granted day:2012-09-13
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