Invention Grant
- Patent Title: Overcurrent detection circuit
- Patent Title (中): 过电流检测电路
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Application No.: US12461472Application Date: 2009-08-12
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Publication No.: US08508901B2Publication Date: 2013-08-13
- Inventor: Sakae Nakajima
- Applicant: Sakae Nakajima
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-234645 20080912
- Main IPC: H02H3/08
- IPC: H02H3/08 ; H03K17/082

Abstract:
An overcurrent detection circuit in accordance with an exemplary aspect of the present invention includes a detection transistor, a potential difference setting unit, and a first transistor whose current value is controlled by the potential difference setting unit. Further, the potential difference setting unit includes a first depletion type transistor, a power-supply voltage being supplied to the drain of the first depletion type transistor, and the gate and source of the first depletion type transistor being connected to the gate of the first transistor, a second transistor, the drain and gate of the second transistor being connected to the gate of the first transistor, and a second depletion type transistor provided on the current path between the sources of the first transistor and the second transistor, the gate and drain of the second depletion type transistor being connected to the source of the detection transistor.
Public/Granted literature
- US20100067161A1 Overcurrent detection circuit Public/Granted day:2010-03-18
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