Invention Grant
- Patent Title: Semiconductor device and driving method of semiconductor device
- Patent Title (中): 半导体器件及其驱动方法
-
Application No.: US13223490Application Date: 2011-09-01
-
Publication No.: US08508967B2Publication Date: 2013-08-13
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-197559 20100903; JP2011-006632 20110117; JP2011-107806 20110513
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; G11C11/24

Abstract:
An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is provided with both a memory circuit including a transistor including an oxide semiconductor (in a broader sense, a transistor whose off-state current is sufficiently small) and a peripheral circuit such as a driver circuit including a transistor including a material other than an oxide semiconductor (in other words, a transistor capable of operating at sufficiently high speed). The peripheral circuit is provided in a lower portion and the memory circuit is provided in an upper portion; thus, the area and size of the semiconductor device can be decreased.
Public/Granted literature
- US20120057396A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-03-08
Information query