Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US13461848Application Date: 2012-05-02
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Publication No.: US08508968B2Publication Date: 2013-08-13
- Inventor: Makoto Saen , Kenichi Osada , Masanao Yamaoka , Tomonori Sekiguchi
- Applicant: Makoto Saen , Kenichi Osada , Masanao Yamaoka , Tomonori Sekiguchi
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-322224 20081218
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C7/00 ; H01L23/48 ; H01L23/52

Abstract:
The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
Public/Granted literature
- US20120217620A1 SEMICONDUCTOR APPARATUS Public/Granted day:2012-08-30
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