Invention Grant
- Patent Title: Method of switching out-of-plane magnetic tunnel junction cells
- Patent Title (中): 切换平面外的磁隧道结电池的方法
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Application No.: US12946900Application Date: 2010-11-16
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Publication No.: US08508973B2Publication Date: 2013-08-13
- Inventor: Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
- Applicant: Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting Raasch & Gebhardt
- Main IPC: G11C11/22
- IPC: G11C11/22
Abstract:
A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
Public/Granted literature
- US20120120708A1 METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS Public/Granted day:2012-05-17
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