Provided is a nonvolatile memory element which has a small variation in operation and allow stable operation. The nonvolatile memory element includes: a first electrode (102); a second electrode (106); a variable resistance layer (105) which is formed between the electrodes (102 and 106) and is connected to the electrodes (102 and 106), and which reversibly changes between a high resistance state and a low resistance state according to a polarity of a voltage applied between the electrodes (102 and 106); and a fixed resistance layer (104) which has a resistance value that is 0.1 and 10 times as large as a resistance value of the variable resistance layer in the high resistance state, the fixed resistance layer (104) being formed between the electrodes (102 and 106) and being electrically connected to at least a part of the variable resistance layer (105).