Invention Grant
US08509014B2 Mechanisms for built-in self repair of memory devices using failed bit maps and obvious repairs
有权
使用故障位图和明显修复的内存设备内置自修复机制
- Patent Title: Mechanisms for built-in self repair of memory devices using failed bit maps and obvious repairs
- Patent Title (中): 使用故障位图和明显修复的内存设备内置自修复机制
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Application No.: US13291620Application Date: 2011-11-08
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Publication No.: US08509014B2Publication Date: 2013-08-13
- Inventor: Volodymyr Shvydun , Saman M. I. Adham
- Applicant: Volodymyr Shvydun , Saman M. I. Adham
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Failure bit map (FBM) data and a built-in-self-test-repair (BISTR) module enable collecting and analyzing FBM data of an entire memory to identify the best repairing method (or mechanism) to make repairs. By performing obvious repair during collection of the FBM data, testing and date storage resources can be saved. As a result, the repair method is better and more efficient than algorithms (or methods) known to the inventors, which only utilize partial (or incomplete) failure data. The compressed data structures used for the FBMs keep the resources used to capture the FBM data and to repair the failed cells relatively limited.
Public/Granted literature
- US20130021859A1 MECHANISMS FOR BUILT-IN SELF REPAIR OF MEMORY DEVICES USING FAILED BIT MAPS AND OBVIOUS REPAIRS Public/Granted day:2013-01-24
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