A voltage generation circuit for providing a read or verification voltage of a nonvolatile memory device includes a first voltage generation unit configured to output a first voltage using a first reference voltage, a bouncing compensation unit configured to change the first voltage using a first control signal, the first voltage, and a voltage of a global source line when a read or verification operation is performed on the nonvolatile memory device, and to output a changed first voltage as a second voltage, a second reference voltage generation unit configured to generate a second reference voltage, and an amplification unit configured to amplify a difference between the second voltage and the second reference voltage according to a set resistance ratio and to output a result of the amplification as a third voltage.