Invention Grant
- Patent Title: Control method of non-volatile semiconductor device
- Patent Title (中): 非易失性半导体器件的控制方法
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Application No.: US12929939Application Date: 2011-02-25
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Publication No.: US08510613B2Publication Date: 2013-08-13
- Inventor: Akiyoshi Seko
- Applicant: Akiyoshi Seko
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-043006 20100226
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A method includes temporarily storing write-data to be written into non-volatile memory cells, respectively, the memory cells being divided into cell groups, performing a first operation including write-phases performed in series and on an associated cell group and including applying a write-voltage to the memory cells belonging to the associated cell group in response to an associated write-data to be written into the memory cells belonging to the cell groups, and performing a second operation after the first operation is completed, which includes read-phases performed in series and on an associated cell group and including applying a first read-voltage to the memory cell or cells belonging to the associated one of the cell groups to produce first read-data therefrom, and comparing the first read-data with the write-data to be written into the memory cells belonging to the associated cell groups to produce comparison data.
Public/Granted literature
- US20110214025A1 Control method of non-volatile semiconductor device Public/Granted day:2011-09-01
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