Invention Grant
- Patent Title: Method and apparatuses for customizable error correction of memory
- Patent Title (中): 存储器可定制错误校正的方法和装置
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Application No.: US12617661Application Date: 2009-11-12
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Publication No.: US08510628B2Publication Date: 2013-08-13
- Inventor: Ferdinando Bedeschi , Paolo Amato , Roberto Gastaldi
- Applicant: Ferdinando Bedeschi , Paolo Amato , Roberto Gastaldi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Described herein are a method and apparatuses for providing customizable error correction for memory arrays. In one embodiment, an apparatus includes a memory device having a memory array to store data and an analog to digital sense unit coupled to the memory array. The analog to digital sense unit senses analog signals associated with the memory array and converts the analog signals into distributions of digital values. An error-correcting code (ECC) unit receives the distributions of digital values from the analog to digital sense unit. A configurable non-volatile look-up table generates ECC parameters including error probability data and provides the ECC parameters to the ECC unit for error correction. The error probability data has error probability values that are associated with the distributions of digital values. The ECC unit executes an ECC algorithm to provide error correction using the error probability data.
Public/Granted literature
- US20110113303A1 METHOD AND APPARATUSES FOR CUSTOMIZABLE ERROR CORRECTION OF MEMORY Public/Granted day:2011-05-12
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