Invention Grant
US08510686B2 Inverse lithography for high transmission attenuated phase shift mask design and creation
有权
用于高透射衰减相移掩模设计和创建的反光刻技术
- Patent Title: Inverse lithography for high transmission attenuated phase shift mask design and creation
- Patent Title (中): 用于高透射衰减相移掩模设计和创建的反光刻技术
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Application No.: US13250971Application Date: 2011-09-30
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Publication No.: US08510686B2Publication Date: 2013-08-13
- Inventor: Eric Henri Jan Hendrickx , Alexander V. Tritchkov , Kyohei Sakajiri
- Applicant: Eric Henri Jan Hendrickx , Alexander V. Tritchkov , Kyohei Sakajiri
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Various implementations of the invention provide for generation of a high transmission phase shift mask layout through inverse lithography techniques. In various implementations of the present invention, a set of mask data having a plurality of pixels is generated. The transmission value associated with each pixel may then be determined through an inverse lithography technique. With various implementations of the invention, the inverse lithography technique identifies an objective function, minimizes the objective function in relation to a simulation of the optical lithographic process, such that the transmission value, which is greater than 6%, may be determined.
Public/Granted literature
- US20120117523A1 INVERSE LITHOGRAPHY FOR HIGH TRANSMISSION ATTENUATED PHASE SHIFT MASK DESIGN AND CREATION Public/Granted day:2012-05-10
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