Invention Grant
- Patent Title: Photonic quantum ring laser and fabrication method thereof
- Patent Title (中): 光子量子环激光器及其制造方法
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Application No.: US13524256Application Date: 2012-06-15
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Publication No.: US08513036B2Publication Date: 2013-08-20
- Inventor: O Dae Kwon , Mi-Hyang Shin , Seung Eun Lee , Young-Heub Jang , Young Chun Kim , Junho Yoon
- Applicant: O Dae Kwon , Mi-Hyang Shin , Seung Eun Lee , Young-Heub Jang , Young Chun Kim , Junho Yoon
- Applicant Address: KR
- Assignee: Postech Academy-Industry Foundation
- Current Assignee: Postech Academy-Industry Foundation
- Current Assignee Address: KR
- Agency: Bacon & Thomas, PLLC
- Priority: KR10-2008-0006300 20080121; KR10-2008-0032967 20080410
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.
Public/Granted literature
- US20120252146A1 PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF Public/Granted day:2012-10-04
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