Invention Grant
- Patent Title: Technique for the growth of planar semi-polar gallium nitride
- Patent Title (中): 平面半极性氮化镓生长技术
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Application No.: US13357432Application Date: 2012-01-24
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Publication No.: US08524012B2Publication Date: 2013-09-03
- Inventor: Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamua
- Applicant: Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamua
- Applicant Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/205
- IPC: H01L21/205
Abstract:
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.
Public/Granted literature
- US20120119222A1 TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE Public/Granted day:2012-05-17
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