Invention Grant
- Patent Title: Sputtering target, transparent conductive film and transparent electrode
- Patent Title (中): 溅射靶，透明导电膜和透明电极
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Application No.: US12065405Application Date: 2006-08-30
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Publication No.: US08524123B2Publication Date: 2013-09-03
- Inventor: Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Akira Kaijo , Satoshi Umeno
- Applicant: Koki Yano , Kazuyoshi Inoue , Akira Kaijo , Satoshi Umeno , Tokie Tanaka
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2005-253986 20050901; JP2005-271665 20050920; JP2005-303024 20051018
- International Application: PCT/JP2006/317135 WO 20060830
- International Announcement: WO2007/026783 WO 20070308
- Main IPC: H01B1/02
- IPC: H01B1/02
Abstract:
A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
Public/Granted literature
- US20100170696A1 SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE Public/Granted day:2010-07-08
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