Invention Grant
US08524362B2 Doped pnictogen chalcogenide nanoplates, methods of making, and assemblies and films thereof
有权
掺杂的白云母硫族化物纳米板，其制备方法和组件及其膜
- Patent Title: Doped pnictogen chalcogenide nanoplates, methods of making, and assemblies and films thereof
- Patent Title (中): 掺杂的白云母硫族化物纳米板，其制备方法和组件及其膜
-
Application No.: US12856264Application Date: 2010-08-13
-
Publication No.: US08524362B2Publication Date: 2013-09-03
- Inventor: Ganpati Ramanath , Theodorian Borca-Tasciuc , Rutvik Mehta
- Applicant: Ganpati Ramanath , Theodorian Borca-Tasciuc , Rutvik Mehta
- Applicant Address: US NY Troy
- Assignee: Rensselaer Polytechnic Institute
- Current Assignee: Rensselaer Polytechnic Institute
- Current Assignee Address: US NY Troy
- Agency: Saliwanchik, Lloyd & Eisenschenk, P.A.
- Main IPC: H01L35/28
- IPC: H01L35/28 ; B01J19/12 ; C04B35/64 ; B32B5/16 ; C09K5/00
Abstract:
Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.
Public/Granted literature
- US20120111385A1 DOPED PNICTOGEN CHALCOGENIDE NANOPLATES, METHODS OF MAKING, AND ASSEMBLIES AND FILMS THEREOF Public/Granted day:2012-05-10
Information query
IPC分类:
