Invention Grant
- Patent Title: Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
- Patent Title (中): 掩模空白，转印掩模，其制造方法和制造半导体器件的方法
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Application No.: US13076254Application Date: 2011-03-30
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Publication No.: US08524421B2Publication Date: 2013-09-03
- Inventor: Osamu Nozawa , Hiroaki Shishido , Toshiyuki Suzuki
- Applicant: Osamu Nozawa , Hiroaki Shishido , Toshiyuki Suzuki
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-079327 20100330; JP2011-037970 20110224
- Main IPC: G03F1/50
- IPC: G03F1/50
Abstract:
In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.
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