Invention Grant
- Patent Title: Method for manufacturing magnetic memory chip device
- Patent Title (中): 磁存储芯片器件制造方法
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Application No.: US13353004Application Date: 2012-01-18
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Publication No.: US08524510B2Publication Date: 2013-09-03
- Inventor: Kazuyuki Misumi , Masahiro Shimizu , Tsuyoshi Koga , Tatsuhiko Akiyama , Tomohiro Murakami
- Applicant: Kazuyuki Misumi , Masahiro Shimizu , Tsuyoshi Koga , Tatsuhiko Akiyama , Tomohiro Murakami
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-047822 20070227
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30
Abstract:
A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.
Public/Granted literature
- US20120122246A1 METHOD FOR MANUFACTURING MAGNETIC MEMORY CHIP DEVICE Public/Granted day:2012-05-17
Information query
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