Invention Grant
- Patent Title: Square pillar-shaped switching element for memory device and method of manufacturing the same
- Patent Title (中): 用于存储器件的方形柱状开关元件及其制造方法
-
Application No.: US12552424Application Date: 2009-09-02
-
Publication No.: US08524523B2Publication Date: 2013-09-03
- Inventor: Hae Chan Park
- Applicant: Hae Chan Park
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0029066 20090403
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A switching element for a memory device includes a base layer including a plurality of line-type trenches. First insulation patterns are formed on the base layer excluding the trenches. First diode portions are formed on the bottoms of the trenches in the form of a thin film. Second insulation patterns are formed on the first diode portions and are spaced apart from each other to form holes in the trenches having the first diode portions provided therein. Square pillar-shaped second diode portions are formed in the holes over the first diode portions.
Public/Granted literature
- US20100252831A1 SQUARE PILLAR-SHAPED SWITCHING ELEMENT FOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-10-07
Information query
IPC分类:
