Invention Grant
- Patent Title: Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
- Patent Title (中): 形成碲化镉光电池的接触电极的方法
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Application No.: US12765225Application Date: 2010-04-22
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Publication No.: US08524524B2Publication Date: 2013-09-03
- Inventor: Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
- Applicant: Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Penny A. Clarke
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
Public/Granted literature
- US20110259423A1 METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS Public/Granted day:2011-10-27
Information query
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