Invention Grant
US08524544B2 MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate
有权
具有纳米线通道和全硅化物（FUSI）的MOSFET缠绕在栅极上
- Patent Title: MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate
- Patent Title (中): 具有纳米线通道和全硅化物（FUSI）的MOSFET缠绕在栅极上
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Application No.: US13468307Application Date: 2012-05-10
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Publication No.: US08524544B2Publication Date: 2013-09-03
- Inventor: Sarunya Bangsaruntip , Guy Cohen
- Applicant: Sarunya Bangsaruntip , Guy Cohen
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Vazken Alexanian
- Agent Michael J. Chang, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Nanowire-channel metal oxide semiconductor field effect transistors (MOSFETs) and techniques for the fabrication thereof are provided. In one aspect, a MOSFET includes a nanowire channel; a fully silicided gate surrounding the nanowire channel; and a raised source and drain connected by the nanowire channel. A method of fabricating a MOSFET is also provided.
Public/Granted literature
- US20120225525A1 MOSFET with a Nanowire Channel and Fully Silicided (FUSI) Wrapped Around Gate Public/Granted day:2012-09-06
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