Invention Grant
US08524558B2 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
有权
分闸具有不同的栅极材料和工作功能，可降低超高密度MOSFET的栅极电阻
- Patent Title: Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
- Patent Title (中): 分闸具有不同的栅极材料和工作功能，可降低超高密度MOSFET的栅极电阻
-
Application No.: US13200882Application Date: 2011-10-04
-
Publication No.: US08524558B2Publication Date: 2013-09-03
- Inventor: Sung-Shan Tai , YongZhong Hu
- Applicant: Sung-Shan Tai , YongZhong Hu
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-In Lin
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the semiconductor substrate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The trenched gate further includes at least two mutually insulated trench-filling segments each filled with materials of different work functions. In an exemplary embodiment, the trenched gate includes a polysilicon segment at a bottom portion of the trenched gate and a metal segment at a top portion of the trenched gate.
Public/Granted literature
Information query
IPC分类:
