Invention Grant
- Patent Title: Semiconductor device having capacitor capable of reducing additional processes and its manufacture method
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Application No.: US13495000Application Date: 2012-06-13
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Publication No.: US08524568B2Publication Date: 2013-09-03
- Inventor: Kenichi Watanabe
- Applicant: Kenichi Watanabe
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2006-018343 20060127
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A first capacitor recess and a wiring trench are formed through an interlayer insulating film. A lower electrode fills the first capacitor recess, and a first wiring fills the wiring trench. An etching stopper film and a via layer insulating film are disposed over the interlayer insulating film. A first via hole extends through the via layer insulating film and etching stopper film and reaches the first wiring, and a first plug fills the first via hole. A second capacitor recess is formed through the via layer insulating film, the second capacitor recess at least partially overlapping the lower electrode, as viewed in plan. The upper electrode covers the bottom and side surfaces of the second capacitor recess. A capacitor is constituted of the upper electrode, etching stopper film and lower electrode. A second wring connected to the first plug is formed over the via layer insulating film.
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Information query
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