Invention Grant
- Patent Title: Manufacturing method of semiconductor substrate and substrate processing apparatus
- Patent Title (中): 半导体衬底和衬底处理设备的制造方法
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Application No.: US12654878Application Date: 2010-01-07
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Publication No.: US08524580B2Publication Date: 2013-09-03
- Inventor: Naonori Akae , Yoshiro Hirose , Tomohide Kato
- Applicant: Naonori Akae , Yoshiro Hirose , Tomohide Kato
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2009-001569 20090107; JP2009-295052 20091225
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; C23C16/00
Abstract:
A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.
Public/Granted literature
- US20100190348A1 Manufacturing method of semiconductor substrate and substrate processing apparatus Public/Granted day:2010-07-29
Information query
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