Invention Grant
- Patent Title: Plasma-activated deposition of conformal films
- Patent Title (中): 等离子体活化沉积的保形膜
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Application No.: US13011569Application Date: 2011-01-21
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Publication No.: US08524612B2Publication Date: 2013-09-03
- Inventor: Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
- Applicant: Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/44

Abstract:
Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.
Public/Granted literature
- US20120077349A1 PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS Public/Granted day:2012-03-29
Information query
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