Invention Grant
- Patent Title: Methods for manufacturing dielectric films
- Patent Title (中): 电介质膜的制造方法
-
Application No.: US13147990Application Date: 2010-02-26
-
Publication No.: US08524617B2Publication Date: 2013-09-03
- Inventor: Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
- Applicant: Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2009-044986 20090227
- International Application: PCT/JP2010/001304 WO 20100226
- International Announcement: WO2010/098121 WO 20100902
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method for manufacturing a dielectric film having a high dielectric constant is provided.The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0
Public/Granted literature
- US20120021612A1 METHODS FOR MANUFACTURING DIELECTRIC FILMS Public/Granted day:2012-01-26
Information query
IPC分类:
