Invention Grant
- Patent Title: Hafnium tantalum oxide dielectrics
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Application No.: US13614059Application Date: 2012-09-13
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Publication No.: US08524618B2Publication Date: 2013-09-03
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.
Public/Granted literature
- US20130012031A1 HAFNIUM TANTALUM OXIDE DIELECTRICS Public/Granted day:2013-01-10
Information query
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