Method for fabricating semiconductor device including performing oxygen plasma treatment

Invention Grant

US08524619B2 Method for fabricating semiconductor device including performing oxygen plasma treatment 有权

Title translation: 包括进行氧等离子体处理的半导体装置的制造方法

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Patent Title: Method for fabricating semiconductor device including performing oxygen plasma treatment
Patent Title (中): 包括进行氧等离子体处理的半导体装置的制造方法
Application No.: US13193034

Application Date: 2011-07-28
Publication No.: US08524619B2

Publication Date: 2013-09-03
Inventor: Masahiro Nishi
Applicant: Masahiro Nishi
Applicant Address: JP Yokohama-shi, Kanagawa
Assignee: Sumitomo Electric Device Innovations, Inc.
Current Assignee: Sumitomo Electric Device Innovations, Inc.
Current Assignee Address: JP Yokohama-shi, Kanagawa
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2010-171700 20100730
Main IPC: H01L21/318
IPC: H01L21/318 ; C23C8/02 ; H01L21/8252

Method for fabricating semiconductor device including performing oxygen plasma treatment

Abstract:

A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm2.

Abstract(Chinese):

一种制造半导体器件的方法，包括对氮化物半导体层的表面进行氧等离子体处理，氧等离子体处理的功率密度为0.2〜0.3W / cm 2。

Public/Granted literature

US20120028475A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2012-02-02

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/318	.......由氮化物组成的无机层