Invention Grant
US08524851B2 Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same
有权
基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺
- Patent Title: Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same
- Patent Title (中): 基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺
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Application No.: US12805081Application Date: 2010-07-12
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Publication No.: US08524851B2Publication Date: 2013-09-03
- Inventor: Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
- Applicant: Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
- Applicant Address: KR Gumi-si, Kyeongsangbuk-do
- Assignee: Cheil Industries, Inc.
- Current Assignee: Cheil Industries, Inc.
- Current Assignee Address: KR Gumi-si, Kyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0003676 20080111
- Main IPC: C08G77/60
- IPC: C08G77/60
Abstract:
A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1).
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