Invention Grant
- Patent Title: Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
- Patent Title (中): 激光照射装置,激光照射方法以及半导体装置的制造方法
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Application No.: US11639416Application Date: 2006-12-15
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Publication No.: US08525070B2Publication Date: 2013-09-03
- Inventor: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2005-366169 20051220
- Main IPC: B23K26/08
- IPC: B23K26/08 ; H01L21/324

Abstract:
A laser irradiation apparatus is provided with a laser oscillator, an articulated beam propagator in which a plurality of pipes are connected to each other in an articulated portion, and a course change means of a laser beam in the articulated portion. At least one pipe of the plurality of pipes includes a transfer lens for suppressing stagger of a laser beam in a traveling direction, in each pipe. The articulated portion produces degree of freedom in disposition of a laser oscillator, and the transfer lens enables suppression of change in beam profile.
Public/Granted literature
- US20070151963A1 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device Public/Granted day:2007-07-05
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