Invention Grant
- Patent Title: Laser irradiation apparatus
- Patent Title (中): 激光照射装置
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Application No.: US11121000Application Date: 2005-05-04
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Publication No.: US08525075B2Publication Date: 2013-09-03
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-137374 20040506
- Main IPC: B23K26/00
- IPC: B23K26/00 ; H01L21/324

Abstract:
The present invention is to provide a laser irradiation apparatus for forming a laser beam which has a shape required for the annealing and which has homogeneous energy distribution, by providing a slit at an image-formation position of a diffractive optical element, wherein the slit has a slit opening whose length is changeable.The laser irradiation apparatus comprises a laser oscillator, a diffractive optical element, and a slit, wherein the slit has a slit opening whose length in a major-axis direction thereof is changeable, wherein a laser beam is delivered obliquely to a substrate, and wherein the laser beam is a continuous wave solid-state, gas, or metal laser, or a pulsed laser with a repetition frequency of 10 MHz or more.
Public/Granted literature
- US08309884B2 Laser irradiation apparatus Public/Granted day:2012-11-13
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