Invention Grant
US08525145B2 Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same
有权
自对准的平面相变存储器元件和器件，采用它们的系统及其形成方法
- Patent Title: Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same
- Patent Title (中): 自对准的平面相变存储器元件和器件，采用它们的系统及其形成方法
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Application No.: US13364800Application Date: 2012-02-02
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Publication No.: US08525145B2Publication Date: 2013-09-03
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width less than a width of a second portion of the phase change material layer. The first electrode, second electrode and phase change material layer may be oriented at least partially along a same horizontal plane.
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